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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90 UHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 14" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW90
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 28 f MHz 470 PL W 4 Gp dB > 11 % > 55
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation (d.c. and r.f.) up to Tmb = 25 C Storage temperature Operating junction temperature IC; IC(AV) ICM Ptot Tstg Tj max. max. max. max. VCESM VCEO VEBO max. max. max.
BLW90
60 V 30 V 4V 0,62 A 2,0 A 18,6 W 200 C
-65 to + 150 C
MGP660
handbook, halfpage
1
handbook, halfpage
30
MGP661
IC (A) Th = 70 C
Tmb = 25 C
Ptot (W) 20
10
10-1 1 10 VCE (V) 102
0 0 50 Th (C) 100
I Continuous d.c. and r.f. operation II Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE (dissipation = 6 W; Tmb = 73,6 C, i.e. Th = 70 C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h = = 9,0 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 4 mA Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 30 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain
(1)
BLW90
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR hFE
> > > < > > typ.
60 V 30 V 4V 2 mA 1 mJ 1 mJ 40 10 to 100
IC = 0,3 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 1,0 A; IB = 0,2 A Transition frequency at f = 500 MHz -IE = 0,3 A; VCB = 28 V -IE = 1,0 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 20 mA; VCE = 28 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
(1)
VCEsat fT fT Cc Cre Ccs
typ. typ. typ. typ. typ. typ.
0,9 V 1,2 GHz 0,9 GHz 8,4 pF 3,6 pF 1,2 pF
August 1986
4
Philips Semiconductors
Product specification
UHF power transistor
BLW90
MGP662
MGP663
handbook, halfpage
100
handbook, halfpage
40
hFE 75
Cc (pF) 30
50
VCE = 25 V 5V
20
typ 25 10
0 0 0.5 1 IC (A) 1.5
0 0 10 20 VCB (V) 30
Fig.4 Typical values; Tj = 25 C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
MGP664
handbook, halfpage
2
fT (GHz) 1.5
typ 1
0.5
0 0 0.5 1 -IE (A) 1.5
Fig.6 VCB = 28 V; f = 500 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 470 470 VCE (V) 28 28 PL (W) 4 4 PS (W) < 0,32 typ. 0,23 Gp (dB) > 11 < typ. 12,5 IC (A) 0,26 typ. 0,25 (%) > 55 typ. 58 zi () 1,7 + j1,8 -
BLW90
ZL () 8 + j26 -
handbook, full pagewidth
L4 C1 50 C2 L1 T.U.T. L2
L6
C6 50
L5
C5
R1
L3 C3 C4 R2
L7
+VCC
MGP665
Fig.7 Test circuit; c.w. class-B.
List of components: C1 = C5 = C6 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C2 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = 100 pF feed-through capacitor C4 = 100 nF polyester capacitor L1 L2 L3 L4 L5 L6 = stripline (34,8 mm x 6,0 mm) = 320 nH; 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 x 4 mm = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) = stripline (12,0 mm x 6,0 mm) = 265 nH; 13 turns closely wound enamelled Cu wire (0,35 mm); int. dia. 3,5 mm; leads 2 x 4 mm = 29 nH; 3 turns closely wound enamelled Cu wire (1 mm); int. dia. 3,5 mm; leads 2 x 4 mm
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/16". R1 = 100 carbon resistor R2 = 10 carbon resistor Component layout and printed-circuit board for 470 MHz test circuit are shown in Fig.8.
August 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLW90
94
handbook, full pagewidth
rivet
48
strap
L3 C3 R1 L2 C1 L1 L4 L5 L6 R2
L7
C4
+VCC
C6
strap C2 C5
MGP666
Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
UHF power transistor
BLW90
MGP667
handbook, halfpage
10
handbook, halfpage
15
MGP668
PL (W) typ 5
Gp (dB) 10
Gp
100 (%)
5
50
0 0 0.5 PS (W) 1
0 0 5 PL (W)
0 10
Fig.9 VCE = 28 V; f = 470 MHz; Th = 25 C.
Fig.10 Typical values; VCE = 28 V; f = 470 MHz; Th = 25 C.
August 1986
8
Philips Semiconductors
Product specification
UHF power transistor
BLW90
MGP669
MGP670
handbook, halfpage
5
handbook, halfpage
50
ri, xi (dB)
RL,XL () ri XL
0
xi
25 RL
-5 200
300
400
f (MHz)
500
0 200
300
400
f (MHz)
500
Typical values; VCE = 28 V; PL = 4 W; Th = 25 C.
Typical values; VCE = 28 V; PL = 4 W; Th = 25 C.
Fig.11 Input impedance (series components).
Fig.12 Load impedance (series components).
Ruggedness The BLW90 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 4 W under the following conditions: VCE = 28 V; f = 470 MHz; Th = 70 C; Rth mb-h = 0,6 K/W.
MGP671
handbook, halfpage
30
Gp (dB) 20
10
0 100
200
300
400
f (MHz)
500
Typical values; VCE = 28 V; PL = 4 W; Th = 25 C.
Fig.13
August 1986
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW90
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW90
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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